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MRF9180R6 5 ? 1 freescale semiconductor wireless rf product device data rf power field effect transistor n ? channel enhancement ? mode lateral mosfet designed for broadband commercial and industrial applications with frequencies from 865 to 895 mhz. the high gain and broadband performance of this device make it ideal for large ? signal, common ? source amplifier applications in 26 volt base station equipment. ? typical cdma performance @ 880 mhz, 26 volts, i dq = 2 700 ma is ? 97 cdma pilot, sync, paging, traffic codes 8 through 13 output power ? 40 watts power gain ? 17 db efficiency ? 26% adjacent channel power ? 750 khz: ? 45.0 dbc @ 30 khz bw 1.98 mhz: ? 60.0 dbc @ 30 khz bw ? internally matched, controlled q, for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? capable of handling 10:1 vswr, @ 26 vdc, 880 mhz, 170 watts (cw) output power ? excellent thermal stability ? characterized with series equivalent large ? signal impedance parameters ? in tape and reel. r6 suffix = 150 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain ? source voltage v dss ? 0.5, +65 vdc gate ? source voltage v gs ? 0.5, + 15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 388 2.22 w w/ c storage temperature range t stg ? 65 to +150 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value unit thermal resistance, junction to case r jc 0.45 c/w table 3. esd protection characteristics test conditions class human body model 1 (minimum) machine model m1 (minimum) note ? caution ? mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. mrf9180 rev. 9, 12/2004 freescale semiconductor technical data MRF9180R6 880 mhz, 170 w, 26 v lateral n ? channel rf power mosfet case 375d ? 05, style 1 ni ? 1230 ? freescale semiconductor, inc., 2004. all rights reserved.
5 ? 2 freescale semiconductor wireless rf product device data MRF9180R6 table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate ? source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics (1) gate threshold voltage (v ds = 10 vdc, i d = 300 adc) v gs(th) 2 2.9 4 vdc gate quiescent voltage (v ds = 26 vdc, i d = 700 madc) v gs(q) ? 3.7 ? vdc drain ? source on ? voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.19 0.5 vdc forward transconductance (v ds = 10 vdc, i d = 6 adc) g fs ? 6 ? s dynamic characteristics (1) output capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 77 ? pf reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 3.8 ? pf functional tests (in freescale test fixture, 50 ohm system) (2) two ? tone common ? source amplifier power gain (v dd = 26 vdc, p out = 170 w pep, i dq = 2 700 ma, f1 = 880.0 mhz, f2 = 880.1 mhz) g ps 16 17.5 ? db two ? tone drain efficiency (v dd = 26 vdc, p out = 170 w pep, i dq = 2 700 ma, f1 = 880.0 mhz, f2 = 880.1 mhz) 35 39 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 170 w pep, i dq = 2 700 ma, f1 = 880.0 mhz, f2 = 880.1 mhz) imd ? ? 31 ? 28 dbc input return loss (v dd = 26 vdc, p out = 170 w pep, i dq = 2 700 ma, f1 = 880.0 mhz, f2 = 880.1 mhz) irl ? ? 15 ? 9 db two ? tone common ? source amplifier power gain (v dd = 26 vdc, p out = 170 w pep, i dq = 2 700 ma, f1 = 865.0 mhz, f2 = 865.1 mhz) g ps ? 17.5 ? db two ? tone drain efficiency (v dd = 26 vdc, p out = 170 w pep, i dq = 2 700 ma, f1 = 865.0 mhz, f2 = 865.1 mhz) ? 38.5 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 170 w pep, i dq = 2 700 ma, f1 = 865.0 mhz, f2 = 865.1 mhz) imd ? ? 31 ? dbc input return loss (v dd = 26 vdc, p out = 170 w pep, i dq = 2 700 ma, f1 = 865.0 mhz, f2 = 865.1 mhz) irl ? ? 13 ? db power output, 1 db compression point (v dd = 26 vdc, cw, i dq = 2 700 ma, f1 = 880.0 mhz) p 1db ? 170 ? w 1. each side of device measured separately. 2. device measured in push ? pull configuration.
MRF9180R6 5 ? 3 freescale semiconductor wireless rf product device data table 4. electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (in freescale test fixture, 50 ohm system) (2) (continued) common ? source amplifier power gain (v dd = 26 vdc, p out = 170 w cw, i dq = 2 700 ma, f1 = 880.0 mhz) g ps ? 16.5 ? db drain efficiency (v dd = 26 vdc, p out = 170 w cw, i dq = 2 700 ma, f1 = 880.0 mhz) ? 55 ? % output mismatch stress (v dd = 26 vdc, p out = 170 w cw, i dq = 2 700 ma, f = 880 mhz, vswr = 10:1, all phase angles at frequency of tests) no degradation in output power before and after test 2. device measured in push ? pull configuration.
5 ? 4 freescale semiconductor wireless rf product device data MRF9180R6 figure 1. 880 mhz broadband test circuit schematic z1 0.420 x 0.080 microstrip z2 0.190 x 0.080 microstrip z3 0.097 x 0.080 microstrip z4, z5, z26, z27 2.170 x 0.080 microstrip z6, z7 0.075 x 0.080 microstrip z8, z9 0.088 x 0.220 microstrip z10, z11 0.088 x 0.220 microstrip z12, z13 0.460 x 0.220 microstrip z14, z15 0.685 x 0.625 microstrip z16, z17 0.055 x 0.625 microstrip z18, z19 0.055 x 0.632 microstrip z20, z21 0.685 x 0.632 microstrip z22, z23 0.732 x 0.080 microstrip z24, z25 0.060 x 0.080 microstrip z28 0.230 x 0.080 microstrip z29 0.460 x 0.080 microstrip board 30 mil teflon ? , r = 2.55, material copper clad, 2 oz cu b1, b2, b5, b6 long ferrite beads, surface mount b3, b4 short ferrite beads, surface mount c1 0.6 ? 4.5 pf variable capacitor c2, c3, c5, c6, c12, c14, 47 pf chip capacitors c19, c20, c21, c22 c4, c9, c10, c15, c16 12 pf chip capacitors c7 0.8 ? 9.1 pf variable capacitor c8 7.5 pf chip capacitor c11, c13 10 f, 35 v tantalum surface mount chip capacitors c17 3.6 pf chip capacitor c18 5.1 pf chip capacitor c23, c24, c26, c27 22 f, 35 v tantalum surface mount chip capacitors c25, c28 220 f, 50 v electrolytic capacitors c29 0.4 ? 2.5 pf variable capacitor coax1, coax2 25 ? , semi rigid coax, 70 mil od, 1.05 long coax3, coax4 50 ? , semi rigid coax, 85 mil od, 1.05 long l1, l2, l3 18.5 nh mini spring inductors, coilcraft l4 12.5 nh mini spring inductor, coilcraft r1, r2 510 ? , 1/10 w chip resistors
MRF9180R6 5 ? 5 freescale semiconductor wireless rf product device data figure 2. 880 mhz broadband test circuit component layout cut out area resistor resistor freescale has begun the transition of marking printed ci rcuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either mo torola or freescale mark ings during the transitio n period. these changes will have no impact on form, fit or function of the current product.
5 ? 6 freescale semiconductor wireless rf product device data MRF9180R6 typical characteristics ??? ??? ??? ??? ??? ??? ??? ??? ??? figure 3. class ab broadband circuit performance figure 4. power gain versus output power figure 5. intermodulation distortion versus output power figure 6. intermodulation distortion products versus output power figure 7. power gain and efficiency versus output power
MRF9180R6 5 ? 7 freescale semiconductor wireless rf product device data typical characteristics figure 8. power gain, efficiency and imd versus output power figure 9. power gain, efficiency and acpr versus output power
5 ? 8 freescale semiconductor wireless rf product device data MRF9180R6 figure 10. series equivalent source and load impedance f mhz z source ? z load ? 865 880 895 2.95 ? j0.00 2.44 ? j1.18 2.48 ? j0.67 3.83 ? j1.02 3.55 ? j1.38 3.34 ? j1.51 ? z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration.

MRF9180R6 5 ? 9 freescale semiconductor wireless rf product device data notes
5 ? 10 freescale semiconductor wireless rf product device data MRF9180R6 notes
MRF9180R6 5 ? 11 freescale semiconductor wireless rf product device data package dimensions case 375d ? 05 issue d ni ? 1230 a g l d k 4x q 2x !!! " n c e m b b (flange) h f r (lid) s (insulator) 4x a t (insulator) (lid) pin 5 4
5 ? 12 freescale semiconductor wireless rf product device data MRF9180R6 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2004. all rights reserved. how to reach us: home page: www.freescale.com e ? mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 ? 800 ? 521 ? 6274 or +1 ? 480 ? 768 ? 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 ? 8 ? 1, shimo ? meguro, meguro ? ku, tokyo 153 ? 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 ? 800 ? 441 ? 2447 or 303 ? 675 ? 2140 fax: 303 ? 675 ? 2150 ldcforfreescalesemiconductor@hibbertgroup.com mrf9180 rev. 9, 12/2004 document number:

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